首页> 外文OA文献 >Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

【2h】

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

机译：具有非晶氧化物半导体的金属铁电半导体非易失性存储器中的聚偏二氟乙烯-三氟乙烯的铁电转换

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
相似文献
相关主题

著录项

作者
Gelinck, G Gerwin; van Breemen, AJJM; Cobb, Brian;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor [J] . G. H. Gelinck, A. J. J. M. van Breemen, B. Cobb Applied Physics Letters . 2015,第9期

机译：具有非晶氧化物半导体的金属铁电半导体非易失性存储器中的聚偏二氟乙烯-三氟乙烯的铁电转换
2. The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [J] . Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Applied Physics Letters . 2011,第1期

机译：使用氧化物半导体和铁电聚合物聚偏二氟乙烯-三氟乙烯的柔性非易失性存储器件
3. Non-volatile resistance switching properties of PbTiO_3 based metal-ferroelectric-semiconductor structures [J] . Wang Zeyang, Zheng Dongxing, Li Dong, Thin Solid Films . 2019,第FEBa1期

机译：基于PbTiO_3的金属铁电半导体结构的非易失性电阻转换特性
4. Ferroelectric polarization in poly(vinylidene fluoride-chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal [C] . 2011 14th International Symposium on Electrets . 2011

机译：聚偏二氟乙烯-三氟氯乙烯薄膜中的铁电极化和具有低聚噻吩单晶的非易失性铁电存储器
5. Electrostrictive and ferroelectric properties of poly(vinylidene fluoride-hexafluoropropylene) copolymer and its blends with poly(vinylidene fluoride-trifluoroethylene) copolymer. [D] . Schirokauer, Adriana. 2002

机译：聚偏二氟乙烯-六氟丙烯共聚物及其与聚偏二氟乙烯-三氟乙烯共聚物的共混物的电致伸缩和铁电性能。
6. Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory [O] . Yue Peng, Genquan Han, Fenning Liu, -1

机译：源于非挥发性存储器非晶膜中氧空位偶极子的类铁电行为
7. Poly(vinylidene fluoride-trifluoroethylene) ferroelectric polymer for non-volatile memory applications [O] . Anh Chien Nguyen -1

机译：聚（氟乙烯 - 三氟乙基）铁电聚合物，用于非易失性存储器应用
8. Transition Metal Oxides, Amorphous Semiconductors, Semiconducting Glasses, Ovshinsky Effect, and Other Switching (Memory) Materials--A Literature Review [R] . Mikek, J. T. 1970

机译：过渡金属氧化物，非晶半导体，半导体玻璃，Ovshinsky效应和其他开关（存储）材料 - 文献综述

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

著录项

相似文献

相关主题

期刊订阅